jiangs u changjiang e l e c tro n ics technology co., l t d sot - 323 plastic-encap s ulate t r ansistors sot - 323 1. base 2. emitter 3. col l ect o r dtc1 14tua transi st or (npn) fea t ures power dissip a tion p cm: 0.2 w (t amb = 25 ) collector current i cm: 0.1 a collector-base volt age v (br)cbo: 50 v operatin g and storag e junction te mperatur e ra nge t j, t st g: -55 to +150 electrical charac teristics (t amb=25 unl ess oth e r w ise sp ecified ) p a r a m e t e r s y m b o l t e st conditions min ty p ma x u ni t co ll e c tor-ba s e brea kdow n vo l t ag e v (b r)cb o ic= 50 a,i e =0 5 0 v co ll e c tor-e mi tter b r ea kdow n vo l t ag e v (b r)ce o ic= 1 ma,i b =0 5 0 v em itter-b ase br eak do w n vo lt ag e v ( b r ) ebo i e = 50 a,i c =0 5 v c o l l ecto r cut-of f curr ent i cb o v cb = 50 v, i e =0 0 . 5 u a emitter cut-of f current i ebo v eb = 4 v, i c =0 0 . 5 u a d c curr ent g a in h fe v ce = 5 v, i c = 1 ma 1 0 0 2 5 0 6 0 0 collector-emitter sa turation volt age v ce (sa t ) i c = 10ma,i b = 1 m a 0 . 3 v t r ansition frequenc y f t v ce = 10 v, i c = 5 ma, f= 100 mhz 2 5 0 mhz imput resist or r 1 7 1 0 1 3 k
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